Synthesis of cubic boron nitride film by an RF plasma CVD method.
نویسندگان
چکیده
منابع مشابه
Synthesis of Boron-Aluminum Nitride Thin Film by Chemical Vapour Deposition Using Gas Bubbler
Boron included aluminium nitride (B-AlN) thin films were synthesized on silicon (Si) substrates through chemical vapour deposition ( CVD ) at 773 K (500 °C). tert-buthylamine (tBuNH2) solution was used as nitrogen source and delivered through gas bubbler. B-AlN thin films were prepared on Si-100 substrates by varying gas mixture ratio of three precursors. The structural properties of the films ...
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ژورنال
عنوان ژورنال: Journal of the Japan Society for Precision Engineering
سال: 1987
ISSN: 1882-675X,0912-0289
DOI: 10.2493/jjspe.53.1527